| PART |
Description |
Maker |
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| NX8346TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| NX6311EH-AZ |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION 1 310纳米AlGaInAs多量子阱激光器的激光二极管 Gb / s光纤通道应用
|
California Eastern Laboratories, Inc.
|
| NX6351GP33-AZ NX6351GP29-AZ |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
California Eastern Labs
|
| NX8346TB |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NDL7603PC NDL7603P NDL7603P1C NDL7603P1D NDL7603P2 |
1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE 1 310纳米光纤通信InGaAsP多量子阱激光器激光二极管同轴模块
Opical Fiber Communications Laser Diode(光纤通信激光二极管)
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NX5322EH-AZ NX5322EK-AZ |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX7338BF-AA |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Laboratories
|
| NX7339BB-AA |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
http://
|
| NDL7605P4D NDL7605P NDL7605P1C NDL7605P1D NDL7605P |
1 310 nm OPTICAL CATV RETURN PATH APPLICATIONS InGaAsP MQW DFB LASER DIODE MODULE WITH ISOLATOR
|
NEC
|
